tm august 2006 FDMS8660S n-channel powertrench ? syncfet tm ?2006 fairchild semiconductor corporation FDMS8660S rev.c (w) www.fairchildsemi.com 1 FDMS8660S n-channel powertrench ? syncfet tm 30v, 40a, 2.4m ? features ? max r ds(on) = 2.4m ? at v gs = 10v, i d = 25a ? max r ds(on) = 3.5m ? at v gs = 4.5v, i d = 21a ? advanced package and silicon combination for low r ds(on) and high efficiency ? syncfet schottky body diode ? msl1 robust package design ? rohs compliant general description the FDMS8660S has been designed to minimize losses in power conversion applications. advancements in both silicon and package technologies have been combined to offer the lowest r ds(on) while maintaining excellent switching performance. this device has the added benefit of an efficient monolithic schottky body diode. application synchronous rectifier for dc/dc converters ? notebook vcore/ gpu low side switch ? networking point of load low side switch ? telecom secondary side rectification mosfet maximum ratings t a = 25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25c 40 a -continuous (silicon limited) t c = 25c 147 -continuous t a = 25c (note 1a) 25 -pulsed 200 p d power dissipation t c = 25c 83 w power dissipation t a = 25c (note 1a) 2.5 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 1.5 c/w r ja thermal resistance, junction to ambient (note 1a) 50 device marking device package reel size tape width quantity FDMS8660S FDMS8660S mlp5x6 13?? 12mm 3000 units 4 3 2 1 5 6 7 8 g s s s pin 1 mlp5x6 (bottom view) d d d d
FDMS8660S n-channel powertrench ? syncfet tm FDMS8660S rev.c (w) www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain to source breakdown voltage i d = 1ma, v gs = 0v 30 v ' bv dss ' t j breakdown voltage temperature coefficient i d = 1ma, referenced to 25 c 35 mv/ c i dss zero gate voltage drain current v ds = 24v, v gs = 0v 500 p a i gss gate to source leakage current v gs = 20v, v gs = 0v 100 na on characteristics v gs(th) gate to source threshold voltage v gs = v ds , i d = 1ma 1 1.5 2 v ' v gs(th) ' t j gate to source threshold voltage temperature coefficient i d = 1ma, referenced to 25 c -6 mv/ c r ds(on) drain to source on resistance v gs = 10v, i d = 25a 1.9 2.4 m : v gs = 4.5v, i d = 21a 2.6 3.5 v gs = 10v, i d = 25a ,t j = 125 c 2.9 3.9 g fs forward transconductance v ds = 10v, i d = 25a 123 s (note 2) dynamic characteristics c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz 4342 pf c oss output capacitance 1213 pf c rss reverse transfer capacitance 425 pf r g gate resistance f = 1mhz 1.0 : switching characteristics t d(on) turn-on delay time v dd = 15v, i d = 1a v gs = 10v, r gen = 6 : 17 31 ns t r rise time 12 22 ns t d(off) turn-off delay time 76 122 ns t f fall time 50 80 ns q g(tot) total gate charge at 10v v gs = 0v to 10v v gs = 0v to 4.5v v ds = 15v, i d = 25a v gs = 10v 81 113 nc q g(4.5v) total gate charge at 4.5v 44 q gs gate to source gate charge 11 nc q gd gate to drain ?miller? charge 16 nc drain-source diod e characteristics v sd source to drain diode forward voltage v gs = 0v, i s = 2.2a (note 2) 0.37 0.7 v t rr reverse recovery time i f = 25a, di/dt = 300a/ p s 35 ns q rr reverse recovery charge 98 nc notes: 1: r t ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r t jc is guaranteed by design while r t ca is determined by the user's board design. 2: pulse test: pulse width < 30 0 p s, duty cycle < 2.0%. a. 50c/w when mounted on a 1 in 2 pad of 2 oz copper b. 125c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper
FDMS8660S n-channel powertrench ? syncfet tm FDMS8660S rev.c (w) www.fairchildsemi.com 3 typical characteristics t j = 25c unless otherwise noted figure 1. 0.0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100 120 v gs = 6.0v v gs = 3.5v v gs = 4.5v pulse duration = 300 p s duty cycle = 2%max v gs = 3.0v v gs = 10v i d , drain current (a) v ds , drain to source voltage (v) on region characteristics figure 2. 0 20406080100120 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs = 3.0v v gs = 3.5v pulse duration = 300 p s duty cycle = 2%max normalized drain to source on-resistance i d , drain current(a) v gs = 4.5v v gs = 6v v gs = 10v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n r e s i s t a n c e -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 i d = 25a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 2345678910 1 2 3 4 5 6 7 8 i d = 25a t j = 25 o c t j = 125 o c pulse duration = 300 p s duty cycle = 2%max v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 60 70 80 90 pulse duration = 300 p s duty cycle = 2%max t j = -55 o c t j = 25 o c t j = 125 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1e-3 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 125 o c v gs = 0v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDMS8660S n-channel powertrench ? syncfet tm FDMS8660S rev.c (w) www.fairchildsemi.com 4 figure 7. 0 102030405060708090 0 2 4 6 8 10 i d = 25a v ds = 20v v ds = 10v v gs , gate to source voltage(v) q g , gate charge(nc) v ds = 15v gate charge characteristics figure 8. 0.1 1 10 100 10 2 10 3 10 4 f = 1mhz v gs = 0v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.1 1 10 100 1000 1 10 3000 t j = 25 o c t av , time in avalanche(ms) i as , avalanche current(a) 30 u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 10 20 30 40 50 60 70 80 limited by package r t jc = 1.5 o c/w v gs = 4.5v v gs = 10v i d , drain current (a) t c , case temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs case temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 10s 1ms 10ms 100ms 1s dc i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t a = 25 o c figure 12. 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 0.1 1 10 100 1000 v gs = 10v single pulse p ( pk ) , peak transient power (w) t, pulse width (s) 3000 t a = 25 o c i = i 25 for temperatures above 25 o c derate peak current as follows: 150 t a ? 125 ----------------------- - s i n g l e p u l s e m a x i m u m power dissipation typical characteristics t j = 25c unless otherwise noted
FDMS8660S n-channel powertrench ? syncfet tm FDMS8660S rev.c (w) www.fairchildsemi.com 5 figure 13. transient thermal response curve 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 1e-4 1e-3 0.01 0.1 1 duty cycle-descending order normalized thermal impedance, z t ja t, rectangular pulse duration (s) d = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 2 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25c unless otherwise noted
FDMS8660S n-channel powertrench ? syncfet tm FDMS8660S rev.c (w) www.fairchildsemi.com 6 syncfet schottky body diode characteristics fairchild?s syncfet process emb eds a schottky diode in parallel with powertrench mosfet. th is diode exhibits similar characteristics to a discrete exte rnal schottky diode in parallel with a mosfet. figure 14 shows the reverses recovery characteristic of the FDMS8660S. schottky barrier diodes exhibit significant leakage at high tem - perature and high reverse voltage. this will increase the power in the device. typical char acteristics (continued) tim e : 12.5 ns/div c urrent : 0.8a/div figure 14. FDMS8660S syncfet body diode reverse recovery characteristic 0 5 10 15 20 25 30 1e-5 1e-4 1e-3 0.01 0.1 t j = 100 o c t j = 125 o c i dss , reverse leakage current (a) v ds , reverse voltage (v) t j = 25 o c figure 15. syncfet body diode reverses leakage versus drain-source voltage
FDMS8660S n-channel powertrench ? syncfet tm FDMS8660S rev.c (w) www.fairchildsemi.com 7 power qfn, 8 leads marketing drawing reference : mkt- pqfn08a rev. a
FDMS8660S rev. c (w) www.fairchildsemi.com 8 FDMS8660S n-channel powertrench ? syncfet tm rev. i20 trademarks the following are registered and unregistered trademarks fairchil d semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described here in; neither does it convey any lice nse under its patent rights, nor the rights of others. these specifications do not expand th e terms of fairchild?s worldwide terms and conditions, specifically the warranty therei n, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fast ? fastr? fps? frfet? fact quiet series? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect ? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx ? msxpro ? ocx ? ocxpro ? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure ? rapidconnect ? serdes ? scalarpump ? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? tinyboost? tinybuck? tinypwm? tinypower? tinylogic ? tinyopto? trutranslation? uhc? unifet? ultrafet ? vcx? wire? across the board. around the world. ? the power franchise ? programmable active droop? datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. spec ifications may change in any manner without notice. preliminary first production this datas heet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datas heet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
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